N-Channel MOSFET, 100 A, 60 V, 3-Pin DPAK Infineon IPD031N06L3GATMA1
- RS Stock No.:
- 8259162
- Mfr. Prt No.:
- IPD031N06L3GATMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
RoHS Status: Exempt
Statement of Conformity
This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.
| RS stock number | 8259162 |
| Product description | N-Channel MOSFET, 100 A, 60 V, 3-Pin DPAK Infineon IPD031N06L3GATMA1 |
| Manufacturer / Brand | Infineon |
| Manufacturer part number | IPD031N06L3GATMA1 |
The foregoing information relates to product sold on, or after, the date shown below.
RS COMPONENTS
| Date | Dec 26, 2024 |
RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132
Product Details
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
Specifications
| Attribute | Value |
| Brand | Infineon |
| Maximum Power Dissipation | 167 W |
| Number of Elements per Chip | 1 |
| Series | OptiMOS 3 |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Drain Source Resistance | 5.2 mΩ |
| Mounting Type | Surface Mount |
| Transistor Configuration | Single |
| Package Type | DPAK (TO-252) |
| Maximum Operating Temperature | +175 °C |
| Length | 6.73 mm |
| Typical Gate Charge @ Vgs | 59 nC @ 4.5 V |
| Maximum Gate Threshold Voltage | 2.2 V |
| Channel Type | N |
| Height | 2.413 mm |
| Width | 6.223 mm |
| Minimum Gate Threshold Voltage | 1.2 V |
| Channel Mode | Enhancement |
| Pin Count | 3 |
| Maximum Drain Source Voltage | 60 V |
| Transistor Material | Si |
| Maximum Continuous Drain Current | 100 A |
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