P-Channel MOSFET, 2.9 A, 60 V, 3 + Tab-Pin SOT-223 Infineon BSP613PH6327XTSA1
- RS Stock No.:
- 8922236
- Mfr. Prt No.:
- BSP613PH6327XTSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
EU Directives 2011/65/EU and 2015/863 restrict the use of the 10 substances below in the manufacture of specified types of electrical equipment.
Whilst this restriction does not legally apply to components, it is recognised that component “compliance” is relevant to many customers.
RS definition of RoHS Compliance:
- The product does not contain any of the restricted substances in concentrations and applications banned by the Directive,
- and for components, the product is capable of being worked on at the higher temperatures required by lead–free soldering
The restricted substances and maximum allowed concentrations in the homogenous material are, by weight:
| Substance | Concentration |
| Lead | 0.1% |
| Mercury | 0.1% |
| PBB (Polybrominated Biphenyls) | 0.1% |
| PBDE ( Polybrominated Diphenyl Ethers) | 0.1% |
| Hexavalent Chromium | 0.1% |
| Cadmium | 0.01% |
| DEHP (Bis (2-Ethylhexl) phthalate) | 0.1% |
| BBP (Benzyl butyl phthalate) | 0.1% |
| DBP (Dibutyl phthalate) | 0.1% |
| DIBP (Diisobutyl phthalate) | 0.1% |
The supplier of the item listed below has informed RS Components that the product is "RoHS Compliant".
RS Components has taken all reasonable steps to confirm this statement. Information relates only to products sold on or after the date of this certificate.
| RS stock number | 8922236 |
| Product description | P-Channel MOSFET, 2.9 A, 60 V, 3 + Tab-Pin SOT-223 Infineon BSP613PH6327XTSA1 |
| Manufacturer / Brand | Infineon |
| Manufacturer part number | BSP613PH6327XTSA1 |
RS Components Ltd, Birchington Road, Corby, Northants, NN17 9RS, UK
Statement of Conformity
This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.
| RS stock number | 8922236 |
| Product description | P-Channel MOSFET, 2.9 A, 60 V, 3 + Tab-Pin SOT-223 Infineon BSP613PH6327XTSA1 |
| Manufacturer / Brand | Infineon |
| Manufacturer part number | BSP613PH6327XTSA1 |
The foregoing information relates to product sold on, or after, the date shown below.
RS COMPONENTS
| Date | Dec 26, 2024 |
RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132
Product Details
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
Specifications
| Attribute | Value |
| Brand | Infineon |
| Maximum Power Dissipation | 10.8 W |
| Number of Elements per Chip | 1 |
| Series | SIPMOS |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Drain Source Resistance | 130 mΩ |
| Mounting Type | Surface Mount |
| Height | 1.5 mm |
| Width | 40 mm |
| Minimum Gate Threshold Voltage | 2.1 V |
| Transistor Configuration | Single |
| Channel Mode | Enhancement |
| Pin Count | 3 + Tab |
| Maximum Drain Source Voltage | 60 V |
| Transistor Material | Si |
| Maximum Continuous Drain Current | 2.9 A |
| Forward Diode Voltage | 1.1 V |
| Package Type | SOT-223 |
| Maximum Operating Temperature | +175 °C |
| Length | 40 mm |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V |
| Maximum Gate Threshold Voltage | 4 V |
| Channel Type | P |
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