TRANSISTOR IGBT N-CH 600V 49A TO247AC
- RS Stock No.:
- 5411281
- Mfr. Prt No.:
- IRG4PC40FDPBF
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
EU Directives 2011/65/EU and 2015/863 restrict the use of the 10 substances below in the manufacture of specified types of electrical equipment.
Whilst this restriction does not legally apply to components, it is recognised that component “compliance” is relevant to many customers.
RS definition of RoHS Compliance:
- The product does not contain any of the restricted substances in concentrations and applications banned by the Directive,
- and for components, the product is capable of being worked on at the higher temperatures required by lead–free soldering
The restricted substances and maximum allowed concentrations in the homogenous material are, by weight:
| Substance | Concentration |
| Lead | 0.1% |
| Mercury | 0.1% |
| PBB (Polybrominated Biphenyls) | 0.1% |
| PBDE ( Polybrominated Diphenyl Ethers) | 0.1% |
| Hexavalent Chromium | 0.1% |
| Cadmium | 0.01% |
| DEHP (Bis (2-Ethylhexl) phthalate) | 0.1% |
| BBP (Benzyl butyl phthalate) | 0.1% |
| DBP (Dibutyl phthalate) | 0.1% |
| DIBP (Diisobutyl phthalate) | 0.1% |
The supplier of the item listed below has informed RS Components that the product is "RoHS Compliant".
RS Components has taken all reasonable steps to confirm this statement. Information relates only to products sold on or after the date of this certificate.
| RS stock number | 5411281 |
| Product description | TRANSISTOR IGBT N-CH 600V 49A TO247AC |
| Manufacturer / Brand | Infineon |
| Manufacturer part number | IRG4PC40FDPBF |
RS Components Ltd, Birchington Road, Corby, Northants, NN17 9RS, UK
Statement of Conformity
This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.
| RS stock number | 5411281 |
| Product description | TRANSISTOR IGBT N-CH 600V 49A TO247AC |
| Manufacturer / Brand | Infineon |
| Manufacturer part number | IRG4PC40FDPBF |
The foregoing information relates to product sold on, or after, the date shown below.
RS COMPONENTS
| Date | Nov 25, 2024 |
RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132
Product Details
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Specifications
| Attribute | Value |
| Brand | Infineon |
| Minimum Operating Temperature | -55 °C |
| Maximum Continuous Collector Current | 49 A |
| Mounting Type | Through Hole |
| Transistor Configuration | Single |
| Package Type | TO-247AC |
| Maximum Operating Temperature | +150 °C |
| Channel Type | N |
| Dimensions | 15.9 x 5.3 x 20.3 mm |
| Pin Count | 3 |
| Maximum Gate Emitter Voltage | ±20 V |
| Maximum Collector Emitter Voltage | 600 V |